Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting

Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon wafers were implanted with 245 keV ^126Te^＋ to a dose of 2×10^15 ions/cm^2,after a PLM process（248 nm,laser fluence of 0.30 and 0.35 J/cm^2,1...

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Published inJournal of semiconductors Vol. 34; no. 6; pp. 16 - 20
Main Author 王熙元 黄永光 刘德伟 朱小宁 崔晓 朱洪亮
Format Journal Article
LanguageEnglish
Published 01.06.2013
Subjects
Crystal structure
PN junctions
pn结
Product life cycle
Production management
Pulsed lasers
Semiconductors
Silicon
Tellurium
单晶
激光熔化
硅片
碲
离子注入
脉冲
过饱和
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ISSN1674-4926
DOI10.1088/1674-4926/34/6/063001

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Summary:Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon wafers were implanted with 245 keV ^126Te^＋ to a dose of 2×10^15 ions/cm^2,after a PLM process（248 nm,laser fluence of 0.30 and 0.35 J/cm^2,1-5 pulses,duration 30 ns）,an n^＋ type single crystalline tellurium supersaturated silicon layer with high carrier density（highest concentration 4.10×10^19 cm^3,three orders of magnitude larger than the solid solution limit） was formed,it shows high broadband optical absorption from 400 to 2500 nm.Current-voltage measurements were performed on these diodes under dark and one standard sun（AM 1.5）,and good rectification characteristics were observed.For present results,the samples with 4-5 pulses PLM are best.
Bibliography:Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon wafers were implanted with 245 keV ^126Te^＋ to a dose of 2×10^15 ions/cm^2,after a PLM process（248 nm,laser fluence of 0.30 and 0.35 J/cm^2,1-5 pulses,duration 30 ns）,an n^＋ type single crystalline tellurium supersaturated silicon layer with high carrier density（highest concentration 4.10×10^19 cm^3,three orders of magnitude larger than the solid solution limit） was formed,it shows high broadband optical absorption from 400 to 2500 nm.Current-voltage measurements were performed on these diodes under dark and one standard sun（AM 1.5）,and good rectification characteristics were observed.For present results,the samples with 4-5 pulses PLM are best.
tellurium supersaturated silicon pn junction; strong sub-band-gap optical absorption; ion implantation; pulsed laser melting
Wang Xiyuan Huang Yongguang,Liu Dewei,Zhu Xiaoning Cui Xiao,Zhu Hongliang （Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China ）
11-5781/TN
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/34/6/063001