朱洪亮, 王. 黄. 刘. 朱. 崔. (2013). Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting. Journal of semiconductors, 34(6), 16-20. https://doi.org/10.1088/1674-4926/34/6/063001
Chicago Style (17th ed.) Citation朱洪亮, 王熙元 黄永光 刘德伟 朱小宁 崔晓. "Formation of Single Crystalline Tellurium Supersaturated Silicon Pn Junctions by Ion Implantation Followed by Pulsed Laser Melting." Journal of Semiconductors 34, no. 6 (2013): 16-20. https://doi.org/10.1088/1674-4926/34/6/063001.
MLA (9th ed.) Citation朱洪亮, 王熙元 黄永光 刘德伟 朱小宁 崔晓. "Formation of Single Crystalline Tellurium Supersaturated Silicon Pn Junctions by Ion Implantation Followed by Pulsed Laser Melting." Journal of Semiconductors, vol. 34, no. 6, 2013, pp. 16-20, https://doi.org/10.1088/1674-4926/34/6/063001.