Temperature-Dependent Characteristics of InGaP∕InGaAs∕GaAs High-Electron Mobility Transistor Measured between 77 and 470 K

This study proposes a delta-doped InGaP/InGaAs/GaAs high-electron mobility transistor (HEMT) grown by a metallorganic chemical vapor deposition system. The wide-range temperature-dependent breakdown characteristics of the s-doped InGaP/InGaAs HEMT are studied. The two-terminal gate-source breakdown...

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 152; no. 10; pp. G778 - G780
Main Authors Lin, Yu-Shyan, Hsieh, Yu-Lung
Format Journal Article
LanguageEnglish
Published 2005
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Summary:This study proposes a delta-doped InGaP/InGaAs/GaAs high-electron mobility transistor (HEMT) grown by a metallorganic chemical vapor deposition system. The wide-range temperature-dependent breakdown characteristics of the s-doped InGaP/InGaAs HEMT are studied. The two-terminal gate-source breakdown voltage of the proposed HEMT is as high as 70 V at 300 K. The drain current of the delta-doped InGaP/InGaAs HEMT has low sensitivity to the measured temperature between 77 and 470 K. Furthermore, the proposed device sustains high voltages over 30 V within the temperature range 77-470 K.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0013-4651
DOI:10.1149/1.2013167