Switching and Heat-dissipation Performance Analysis of an LTCC-based Leadless Surface Mount Package
A leadless surface mount package was developed to enhance the switching and heat-dissipation properties of a power semiconductor. The package was implemented through a low-temperature co-fired ceramic (LTCC)-based multilayer circuit substrate that could form embedded cavities. A silicon carbide (SiC...
Saved in:
Published in | Journal of semiconductor technology and science Vol. 22; no. 1; pp. 1 - 9 |
---|---|
Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
대한전자공학회
01.02.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A leadless surface mount package was developed to enhance the switching and heat-dissipation properties of a power semiconductor. The package was implemented through a low-temperature co-fired ceramic (LTCC)-based multilayer circuit substrate that could form embedded cavities. A silicon carbide (SiC) Schottky barrier diode (SBD) bare die was attached to the cavity in the LTCC substrate. Chip interconnection was realized using a wide and thick copper (Cu) clip with a low parasitic inductance and electrical resistance compared to those of a conventional wire. Silver-filled multiple vias and wide metal planes were used to reduce the electrical parasitic effects and enhance the heat-dissipation of the package. The DC and dynamic characteristics of the 600 V/10 A-class SiC SBD package involving the proposed technologies were evaluated. The dynamic test results indicated that the reverse recovery charge (Qrr) was 18.7% lower than that of a traditional TO-220 packaged product with the same bare die. Furthermore, two leadless commercial products and the proposed package prototype were applied to a power factor correction (PFC) converter, and the power loss and heat-dissipation performances were compared. The proposed package exhibited a lower loss and higher heat dissipation than those of the commercial products. KCI Citation Count: 1 |
---|---|
ISSN: | 1598-1657 2233-4866 |
DOI: | 10.5573/JSTS.2022.22.1.1 |