Electric field optimized LDMOST using multiple decrescent and reverse charge regions

A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure...

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 7; pp. 65 - 68
Main Author 成建兵 夏晓娟 蹇彤 郭宇峰 于舒娟 杨浩
Format Journal Article
LanguageEnglish
Published 01.07.2014
Subjects
Breakdown
Electric charge
Electric fields
Electric potential
LDMOST
Optimization
Semiconductors
Tradeoffs
Voltage
优化
击穿电压
半导体场效应晶体管
反向
正区域
电场分布
电荷
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Summary:A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions＇ lengths.
Bibliography:LDMOST; multiple decrescent and reverse charge regions; electric field; breakdown voltage; on-resistance
11-5781/TN
Cheng Jianbing, Xia Xiaojuan, Jian Tong, Guo Yufeng, Yu Shujuan, Yang Hao（ 1 School of Electronic Science ＆ Engineering, RF Integration and Micro Assembly Engineering Laboratory, Nanjing University of Posts and Telecommunications, Nanjing 210003, China 2National Application-Specific Integrated Circuit （ASIC） System Engineering Research Center, Southeast University, Nanjing 210096, China）
A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions＇ lengths.
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SourceType-Scholarly Journals-1
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content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/35/7/074007