Doping of gallium nitride using disilane

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Bibliographic Details
Published inJournal of electronic materials Vol. 24; no. 11; pp. 1547 - 1550
Main Authors WICKENDEN, A. E, ROWLAND, L. B, DOVERSPIKE, K, GASKILL, D. K, FREITAS, J. A, SIMONS, D. S, CHI, P. H
Format Conference Proceeding Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.11.1995
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Defects and impurities: doping, implantation, distribution, concentration, etc
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Vapor phase epitaxy; growth from vapor phase
Inorganic compounds
Epitaxial layers
Semiconductor materials
Gallium nitrides
Organometallic compounds
Doping
Photoluminescence
Binary compounds
VPE
Crystal growth from vapors
Experimental study
MOCVD
Silicon additions
Disilane
Low pressure
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More Information
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02676809