Lead zirconate titanate behaviors in an LDMOS

The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memor...

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Published inChinese physics B Vol. 22; no. 7; pp. 578 - 581
Main Author 翟亚红 李威 李平 李俊宏 胡滨 霍伟荣 范雪 王刚
Format Journal Article
LanguageEnglish
Published 01.07.2013
Subjects
Breakdown
Circuits
Deposition
Devices
Drains
Electric potential
Energy conversion
LDMOS
Lead zirconate titanates
Voltage
击穿电压
电源转换电路
能量转换系统
行为
金属氧化物半导体
锆钛酸铅
高压设备
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/7/078501

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Summary:The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor （LDMOS）. The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.
Bibliography:The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor （LDMOS）. The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.
laterally diffused metal oxide semiconductor （LDMOS）;lead zirconate titanate;memory behavior;retention
11-5639/O4
Zhai Ya-Hong, Li Wei, Li Ping, Li Jun-Hong, Hu Bin, Huo Wei-Rong, Fan Xue, Wang Gang State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/7/078501