Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

• Published in: Chinese physics B Vol. 20; no. 1; pp. 639 - 642
• Main Author: 方浩 龙浩 桑立雯 齐胜利 熊畅 于彤军 杨志坚 张国义
• Format: Journal Article
• Language: English
• Published: IOP Publishing 2011
• Subjects: 化学气相; 发光二极管; 有机金属; 氮化硅; 淀积层; 蓝宝石; 非极性
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/20/1/017804

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/（V· s） and 460 Ω/respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electrolurninescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.