张波, 王. 罗. 蒋. 王. 周. 吴. 王. 蔡. 罗. 范. 胡. 范. 魏. (2013). Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench. Chinese physics B, 22(2), 439-444. https://doi.org/10.1088/1674-1056/22/2/027305
Chicago Style (17th ed.) Citation张波, 王沛 罗小蓉 蒋永恒 王琦 周坤 吴丽娟 王骁玮 蔡金勇 罗尹春 范叶 胡夏融 范远航 魏杰. "Ultra-low Specific On-resistance Vertical Double-diffused Metal-oxide Semiconductor with a High-k Dielectric-filled Extended Trench." Chinese Physics B 22, no. 2 (2013): 439-444. https://doi.org/10.1088/1674-1056/22/2/027305.
MLA (9th ed.) Citation张波, 王沛 罗小蓉 蒋永恒 王琦 周坤 吴丽娟 王骁玮 蔡金勇 罗尹春 范叶 胡夏融 范远航 魏杰. "Ultra-low Specific On-resistance Vertical Double-diffused Metal-oxide Semiconductor with a High-k Dielectric-filled Extended Trench." Chinese Physics B, vol. 22, no. 2, 2013, pp. 439-444, https://doi.org/10.1088/1674-1056/22/2/027305.