Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench（HK TG VDMOS） is proposed in this paper.The HK TG VDMOS features a high-k（HK） trench below the trench gate.Firstly,the extended HK trench not only causes...

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Published inChinese physics B Vol. 22; no. 2; pp. 439 - 444
Main Author 王沛 罗小蓉 蒋永恒 王琦 周坤 吴丽娟 王骁玮 蔡金勇 罗尹春 范叶 胡夏融 范远航 魏杰 张波
Format Journal Article
LanguageEnglish
Published 01.02.2013
Subjects
Dielectrics
Electric potential
Gates
Metal oxide semiconductors
Metal oxides
Semiconductors
Trenches
VDMOS器件
Voltage
低导通电阻
双扩散
垂直
填充
扩展槽
金属氧化物半导体
高k电介质
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Summary:An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench（HK TG VDMOS） is proposed in this paper.The HK TG VDMOS features a high-k（HK） trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage（BV）.Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction（SJ） vertical double-diffused metal-oxide semiconductor（VDMOS）,the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS（TG VDMOS） and conventional superjunction trench gate VDMOS（SJ TG CDMOS）.
Bibliography:high permittivity,specific on-resistance,breakdown voltage,trench gate
An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench（HK TG VDMOS） is proposed in this paper.The HK TG VDMOS features a high-k（HK） trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage（BV）.Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction（SJ） vertical double-diffused metal-oxide semiconductor（VDMOS）,the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS（TG VDMOS） and conventional superjunction trench gate VDMOS（SJ TG CDMOS）.
Wang Pei . Luo Xiao-Rong , Jiang Yong-Heng , Wang Qi , Zhou Kun,Wu Li-Juan,Wang Xiao-Wei , Cai Jin-Yong , Luo Yin-Chun , Fan Ye , 范远航, Hu Xia-Rong , Fan Yuan-Hang , Wei Jie, Zhang Bo（State Key Laboratory of Electronic Thin Fihns and Integrated Devices. University of Electronic Science and Technology of China. Chengdu 610054, China）
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/2/027305