Performance comparison of radiation-hardened layout techniques
Total ionizing dose （TID） effect and single event effect （SEE） from space may cause serious effects on bulk silicon and silicon on insulator （SOl） devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout...
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| Published in | Journal of semiconductors Vol. 35; no. 6; pp. 119 - 122 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2014
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/35/6/065006 |
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| Abstract | Total ionizing dose （TID） effect and single event effect （SEE） from space may cause serious effects on bulk silicon and silicon on insulator （SOl） devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout techniques to mitigate TID and SEE effect on bulk silicon and SOl device and their corresponding advantages and disadvantages are studied in detail. Under 0.13μm bulk silicon and SOl process technology, performance comparisons of two different kinds of DFF circuit are made, of which one kind is only hardened in layout （protection ring for bulk silicon DFF, T-gate for SO! DFF）, while the other kind is also hardened in schematic such as DICE structure. The result shows that static power and leakage of SOI DFF is lower than that of bulk silicon DFF, while SOI DFF with T-gate is a little slower than bulk silicon DFF with protection ring, which will provide useful guidance for radiation-hardened circuit and layout design. |
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| AbstractList | Total ionizing dose （TID） effect and single event effect （SEE） from space may cause serious effects on bulk silicon and silicon on insulator （SOl） devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout techniques to mitigate TID and SEE effect on bulk silicon and SOl device and their corresponding advantages and disadvantages are studied in detail. Under 0.13μm bulk silicon and SOl process technology, performance comparisons of two different kinds of DFF circuit are made, of which one kind is only hardened in layout （protection ring for bulk silicon DFF, T-gate for SO! DFF）, while the other kind is also hardened in schematic such as DICE structure. The result shows that static power and leakage of SOI DFF is lower than that of bulk silicon DFF, while SOI DFF with T-gate is a little slower than bulk silicon DFF with protection ring, which will provide useful guidance for radiation-hardened circuit and layout design. Total ionizing dose (TID) effect and single event effect (SEE) from space may cause serious effects on bulk silicon and silicon on insulator (SOI) devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout techniques to mitigate TID and SEE effect on bulk silicon and SOI device and their corresponding advantages and disadvantages are studied in detail. Under 0.13 mu m bulk silicon and SOI process technology, performance comparisons of two different kinds of DFF circuit are made, of which one kind is only hardened in layout (protection ring for bulk silicon DFF, T-gate for SOI DFF), while the other kind is also hardened in schematic such as DICE structure. The result shows that static power and leakage of SOI DFF is lower than that of bulk silicon DFF, while SOI DFF with T-gate is a little slower than bulk silicon DFF with protection ring, which will provide useful guidance for radiation-hardened circuit and layout design. |
| Author | 吕灵娟 刘汝萍 林敏 桑泽华 邹世昌 杨根庆 |
| AuthorAffiliation | The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China University of Chinese Academy of Sciences, Beijing 100049, China |
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| Cites_doi | 10.1142/S0129156404002417 10.1109/TNS.2003.813129 10.1109/TNS.2008.920260 10.1109/23.903774 10.1109/23.819140 10.1109/TNS.2008.2007119 10.1109/TNS.2005.860717 10.1109/TED.2011.2173201 |
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| Notes | total ionizing dose effect; single event effect; bulk silicon; silicon on insulator; radiation-hardened layout techniques Lu Lingjuan, Liu Ruping, Lin Min, Sang Zehua, Zou Shichang, Yang Genqing 1 The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 2 University of Chinese Academy of Sciences, Beijing 100049, China 11-5781/TN Total ionizing dose （TID） effect and single event effect （SEE） from space may cause serious effects on bulk silicon and silicon on insulator （SOl） devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout techniques to mitigate TID and SEE effect on bulk silicon and SOl device and their corresponding advantages and disadvantages are studied in detail. Under 0.13μm bulk silicon and SOl process technology, performance comparisons of two different kinds of DFF circuit are made, of which one kind is only hardened in layout （protection ring for bulk silicon DFF, T-gate for SO! DFF）, while the other kind is also hardened in schematic such as DICE structure. The result shows that static power and leakage of SOI DFF is lower than that of bulk silicon DFF, while SOI DFF with T-gate is a little slower than bulk silicon DFF with protection ring, which will provide useful guidance for radiation-hardened circuit and layout design. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 12 13 Huang Ru (3) 2005 Hargrove M J (7) 1998 Lacoe R C (9) 2001 2 Baumann R C (1) 2005 4 5 6 8 10 |
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| Snippet | Total ionizing dose （TID） effect and single event effect （SEE） from space may cause serious effects on bulk silicon and silicon on insulator （SOl） devices, so... Total ionizing dose (TID) effect and single event effect (SEE) from space may cause serious effects on bulk silicon and silicon on insulator (SOI) devices, so... |
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| SubjectTerms | Circuits Devices DFF Hardening Insulators Leakage Performance assessment Semiconductors Silicon Single Event Effects 单粒子效应 性能对比 性能比较 技术 抗辐射 绝缘体上硅 设计人员 |
| Title | Performance comparison of radiation-hardened layout techniques |
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