Performance comparison of radiation-hardened layout techniques

Total ionizing dose （TID） effect and single event effect （SEE） from space may cause serious effects on bulk silicon and silicon on insulator （SOl） devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout...

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 6; pp. 119 - 122
Main Author 吕灵娟 刘汝萍 林敏 桑泽华 邹世昌 杨根庆
Format Journal Article
LanguageEnglish
Published 01.06.2014
Subjects
Circuits
Devices
DFF
Hardening
Insulators
Leakage
Performance assessment
Semiconductors
Silicon
Single Event Effects
单粒子效应
性能对比
性能比较
技术
抗辐射
绝缘体上硅
设计人员
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/35/6/065006

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Summary:Total ionizing dose （TID） effect and single event effect （SEE） from space may cause serious effects on bulk silicon and silicon on insulator （SOl） devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout techniques to mitigate TID and SEE effect on bulk silicon and SOl device and their corresponding advantages and disadvantages are studied in detail. Under 0.13μm bulk silicon and SOl process technology, performance comparisons of two different kinds of DFF circuit are made, of which one kind is only hardened in layout （protection ring for bulk silicon DFF, T-gate for SO! DFF）, while the other kind is also hardened in schematic such as DICE structure. The result shows that static power and leakage of SOI DFF is lower than that of bulk silicon DFF, while SOI DFF with T-gate is a little slower than bulk silicon DFF with protection ring, which will provide useful guidance for radiation-hardened circuit and layout design.
Bibliography:total ionizing dose effect; single event effect; bulk silicon; silicon on insulator; radiation-hardened layout techniques
Lu Lingjuan, Liu Ruping, Lin Min, Sang Zehua, Zou Shichang, Yang Genqing 1 The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 2 University of Chinese Academy of Sciences, Beijing 100049, China
11-5781/TN
Total ionizing dose （TID） effect and single event effect （SEE） from space may cause serious effects on bulk silicon and silicon on insulator （SOl） devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout techniques to mitigate TID and SEE effect on bulk silicon and SOl device and their corresponding advantages and disadvantages are studied in detail. Under 0.13μm bulk silicon and SOl process technology, performance comparisons of two different kinds of DFF circuit are made, of which one kind is only hardened in layout （protection ring for bulk silicon DFF, T-gate for SO! DFF）, while the other kind is also hardened in schematic such as DICE structure. The result shows that static power and leakage of SOI DFF is lower than that of bulk silicon DFF, while SOI DFF with T-gate is a little slower than bulk silicon DFF with protection ring, which will provide useful guidance for radiation-hardened circuit and layout design.
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ISSN:1674-4926
DOI:10.1088/1674-4926/35/6/065006