A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range

The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to...

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Published inChinese physics B Vol. 22; no. 9; pp. 446 - 449
Main Author 魏恒 金鹏 罗帅 季海铭 杨涛 李新坤 吴剑 安琪 吴艳华 陈红梅 王飞飞 吴巨 王占国
Format Journal Article
LanguageEnglish
Published 01.09.2013
Subjects
Holes
InAs
Indium arsenides
Indium phosphides
Injection current
InP
Lasers
Quantum dots
Threshold currents
Tuning
Wavelengths
光栅耦合
外腔
注入电流
纳米
调谐范围
量子点激光器
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/9/094211

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Summary:The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.
Bibliography:quantum dot, external cavity, tunable laser
The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.
Wei Heng, Jin Peng, Luo Shuai, Ji Hai-Ming, Yang Tao, Li Xin-Kun, Wu Jian, An Qi, Wu Yan-Hua, Chen Hong-Mei, Wang Fei-Fei, Wu Ju, and Wang Zhan-Guo（ Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/9/094211