High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold cu...

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Published inChinese physics B Vol. 22; no. 9; pp. 439 - 441
Main Author 徐云 王永宾 张宇 宋国峰 陈良惠
Format Journal Article
LanguageEnglish
Published 01.09.2013
Subjects
Density
Electric power generation
Laser diodes
Lasers
Lasing
Optical properties
Quantum efficiency
Quantum wells
Threshold currents
室温
应变量子阱激光器
操作
激光二极管
连续波
锑化镓
阈值电流密度
高功率
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/9/094208

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Summary:A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 （72 A/cm^2 per quantum well）, and the slope efficiency was 0.2 W/A. The internal loss was 11 cm^-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.
Bibliography:Galn（As）Sb/AlGaAsSb diode lasers, threshold current density, output power
Xu Yun, Wang Yong-Bin, Zhang Yu, Song Guo-Feng, and Chen Liang-Hui（ Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China）
A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 （72 A/cm^2 per quantum well）, and the slope efficiency was 0.2 W/A. The internal loss was 11 cm^-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.
11-5639/O4
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/9/094208