Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

• Published in: Chinese physics B Vol. 23; no. 5; pp. 521 - 524
• Main Author: 张月 卓青青 刘红侠 马晓华 郝跃
• Format: Journal Article
• Language: English
• Published: 01.05.2014
• Subjects: Bias; Computer simulation; Dynamics; Instability; Mathematical models; MOSFETs; NBTI; Stability; Stresses; 功率MOSFET; 平衡阶段; 平顶; 应力状态; 稳定效应; 负偏压温度; 金属氧化物半导体场效应晶体管

The effect of the static negative bias temperature （NBT） stress on a p-channel power metal-oxide-semiconductor field-effect transistor （MOSFET） is investigated by experiment and simulation. The time evolution of the negative bias temperature instability （NBTI） degradation has the trend predicted by...