Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

The effect of the static negative bias temperature （NBT） stress on a p-channel power metal-oxide-semiconductor field-effect transistor （MOSFET） is investigated by experiment and simulation. The time evolution of the negative bias temperature instability （NBTI） degradation has the trend predicted by...

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Published inChinese physics B Vol. 23; no. 5; pp. 521 - 524
Main Author 张月 卓青青 刘红侠 马晓华 郝跃
Format Journal Article
LanguageEnglish
Published 01.05.2014
Subjects
Bias
Computer simulation
Dynamics
Instability
Mathematical models
MOSFETs
NBTI
Stability
Stresses
功率MOSFET
平衡阶段
平顶
应力状态
稳定效应
负偏压温度
金属氧化物半导体场效应晶体管
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Summary:The effect of the static negative bias temperature （NBT） stress on a p-channel power metal-oxide-semiconductor field-effect transistor （MOSFET） is investigated by experiment and simulation. The time evolution of the negative bias temperature instability （NBTI） degradation has the trend predicted by the reaction-diffusion （R-D） model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R-D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.
Bibliography:negative bias temperature instability （NBTI）, reaction-diffusion model, interface traps, powerMOSFET
The effect of the static negative bias temperature （NBT） stress on a p-channel power metal-oxide-semiconductor field-effect transistor （MOSFET） is investigated by experiment and simulation. The time evolution of the negative bias temperature instability （NBTI） degradation has the trend predicted by the reaction-diffusion （R-D） model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R-D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.
Zhang Yue, Zhuo Qing-Qing, Liu Hong-Xia, Ma Xiao-Hua, Hao Yue（ 1.School of Microelectronics, Xidian University, Xi＇ an 710071, China ;2. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xi＇ an 710071, China ;3.School of Technical Physics, Xidian University, Xi ＇an 710071, China）
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/5/057304