OSIRIS II, A Two-Dimensional Process Simulator for SIMOX Structures

The simulation of technological processes is very important for the fabrication of integrated circuits. In this paper, the authors present OSIRIS II for the simulation on SIMOX structures. The program takes into account the limiting conditions associated with this material. The models used are brief...

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Bibliographic Details
Published inESSDERC '88: 18th European Solid State Device Research Conference pp. c4-59 - c4-62
Main Authors Sweid, I., Guillemot, N., Kamarinos, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.1988
Subjects
Analytical models
Boron
Circuit simulation
Fabrication
Impurities
Integrated circuit technology
Nonlinear equations
Resists
Resumes
Silicon
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Summary:The simulation of technological processes is very important for the fabrication of integrated circuits. In this paper, the authors present OSIRIS II for the simulation on SIMOX structures. The program takes into account the limiting conditions associated with this material. The models used are briefly recalled. Finally, a complete simulation of an N-MOS device on SIMOX is presented.
ISBN:9782868830999
2868830994
DOI:10.1051/jphyscol:1988411