Influence of deposition power and annealing on the performance of RF-sputtered SnS for infrared photodetection

• Published in: Infrared physics & technology Vol. 127; p. 104468
• Main Authors: Wei, Jiahui, Ye, Zhehao, Yu, Hao, Xie, Ying
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2022
• Subjects: Film preparation; Magnetron sputtering; Near infrared detection; Tin sulfide; Near infrared detection; Film preparation; Magnetron sputtering; Tin sulfide
• ISSN: 1350-4495; 1879-0275
• DOI: 10.1016/j.infrared.2022.104468

•Optimization studies towards the influence of RF power and post-deposition annealing temperature on the micro structure and photodetection performance of SnS are achieved by Radio Frequency magnetron sputtering method.•A proper increase in deposition power and annealing temperature facilitates the crystallinity and surface stability of SnS films. The optical band gaps shift from 1.41 eV to 1.30 eV with Radio Frequency power increasing from 30 W to 50 W which could be further tuned by post-deposition annealing on different temperatures.•The SnS prototype photodetector shows a promising infrared weak-light and self-powered detection alternative and the responsivity and detectivity are improved to be 226.55 mA/W and 1.76 × 1010 Jones with optimal magnetron sputtering parameters. Tin sulfide has shown their great potential in electronic and photonic systems due to its unique optoelectronic properties, less toxic nature, cost-effective and economically earth-abundant elements. The multivalence of Sn and stereochemical activity endow it with rich phase spaces and susceptible internal structures, which in turn directly affect its properties. In this paper, optimization studies towards the influence of RF power and post-deposition annealing temperature on the micro structure and photodetection performance of SnS are achieved by RF magnetron sputtering method. The structural characterizations confirm the significance of RF power for phase formation and photoelectric conversion ability. The optical band gap shifts from 1.41 eV to 1.30 eV as RF power increasing from 30 W to 50 W, in the meantime, the optoelectronic performances such as responsivity and specific detectivity are subsequently improved to be 226.55 mA/W and 1.76 × 1010 Jones. Further, the variations in infrared photodetection performance correlated with the annealing temperature exhibite a more well-behaved photoresponse at 300 °C. The results pave the way to discern the growth − structure − property relationships and then guide potencial applications of tin sulfide family.