Oxygen plasma treatment of SiOxCy(―H) films polymerized by atmospheric pressure dielectric barrier discharge using hexamethylcyclrotrisiloxane

• Published in: Thin solid films Vol. 519; no. 20; pp. 6750 - 6754
• Main Authors: Kim, Yoon Kee, Kim, Gi Taek
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.08.2011
• Subjects: Atmospheric pressure; Barometric pressure; Condensed matter: structure, mechanical and thermal properties; Contact angle; Cross-disciplinary physics: materials science; rheology; Droplets; Exact sciences and technology; Ion and electron beam-assisted deposition; ion plating; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Morphology; Oxidation; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Plasma-based ion implantation and deposition; Silicon dioxide; Solid-fluid interfaces; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; Wetting; Atomic force microscopy; Stoichiometry; Atmospheric pressure; Dielectric barrier discharge; Surface morphology; Plasma assisted processing; Hexamethylcyclotrisiloxane; Contact angle; Surface composition; Plasma oxidation; Silicon dioxide; Thin films; Wettability; Silicon oxides; Droplets; Oxidation; Silicon; Ionic polymerization; Plasma polymerization; Plasma deposition; Capacitive discharge; X-ray photoelectron spectra
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.01.206

The SiO2-like layers were obtained by plasma-oxidation of the SiOxCy(-H) films deposited from hexamethylcyclotrisiloxane (HMCTSO) with helium and oxygen. The SiO2-like layers were formed on as-deposited SiOxCy(-H) films within a second by oxidation using the He/O2 atmospheric pressure dielectric barrier discharge (APDBD). The elemental ratio of oxygen to silicon in the layer was increased up to 1.95 which is closed to stoichiometry of SiO2. The elemental composition and surface morphology were studied by means of x-ray photoelectron spectroscopy and atomic force microscopy. Wettability of the oxidized thin films was investigated by water droplet contact angle measurement. The contact angle of SiOxCy(-H) films are decreased from 63 degree to below 10 degree within a second by oxidation. Correlation between the elemental composition and the contact angle were discussed. The effects of oxidation duration and discharge generation voltage on the composition and surface morphology of the film were investigated.