VMOS reliability

Whenever a new technology such as VMOS emerges, one key element to its success is the reliability of the products manufactured in that technology. The results of a reliability study to examine the fundamental VMOS device stability, high-temperature operating life (HTOL) failure rates, and electrosta...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 26; no. 1; pp. 43 - 48
Main Authors Edwards, J.R., Bhatti, I.S., Fuller, E.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1979
Online AccessGet full text

Cover

More Information
Summary:Whenever a new technology such as VMOS emerges, one key element to its success is the reliability of the products manufactured in that technology. The results of a reliability study to examine the fundamental VMOS device stability, high-temperature operating life (HTOL) failure rates, and electrostatic protection are presented for the VMOS technology. Experimental data for more than five (5) million device-hours of HTOL predict a reliability failure rate of less than 0.01 percent/1000 h at 70°C for products fabricated in the VMOS technology. In addition, an electrostatic protection capability greater than 1800 V is possible with specially designed VMOS input protection devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1979.19377