An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors

We extend the iterative matrix method for the solution of the Boltzmann transport equation in multi-band semiconductors to the calculation of second order parameters such as correlation functions and the noise temperature. The method allows also the extraction of the diffusion coefficient in each va...

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Bibliographic Details
Published inJournal of computational electronics Vol. 5; no. 4; pp. 261 - 266
Main Authors Diyadi, J., Hlou, L., Amechnoue, K., Moatadid, A., Varani, L., Palermo, C., Millithaler, J. F., Vaissière, J. C., Nougier, J. P.
Format Journal Article
LanguageEnglish
Published Dordrecht Springer Nature B.V 01.12.2006
Springer Verlag
Subjects
Boltzmann transport equation
Correlation
Diffusion coefficient
Electronics
Engineering Sciences
Mathematical analysis
Matrix methods
Noise temperature
Order parameters
Matrix solution
Boltzmann equation
Diffusion
Noise
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Summary:We extend the iterative matrix method for the solution of the Boltzmann transport equation in multi-band semiconductors to the calculation of second order parameters such as correlation functions and the noise temperature. The method allows also the extraction of the diffusion coefficient in each valley. The results for the case of GaAs with two valleys show that the diffusion in this material is dominated mainly by interactions in the Γ valley. The calculated noise temperature is in good agreement with Monte Carlo results.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-006-0143-1