Effects of the utilization of a buffer layer on the growth of Pb(Zr,Ti)O3 thin films by metalorganic chemical vapor deposition

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Bibliographic Details
Published inJournal of crystal growth Vol. 145; no. 1-4; pp. 226 - 231
Main Authors SHIMIZU, M, SUGIYAMA, M, FUJISAWA, H, HAMANO, T, SHIOSAKI, T, MATSUSHIGE, K
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.12.1994
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Buffer layer
Atomic force microscopy
Inorganic compounds
Lead titanates
Organometallic compounds
Surfaces
Crystal growth from vapors
PZT
Experimental study
Lead zirconates
CVD
Thin films
Ferroelectric materials
Growth mechanism
Quaternary compounds
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ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)91055-3