Vertical transport in a GaAs/(Ga,Al)As superlattice containing an enlarged quantum well studied by photoluminescence in high in-plane magnetic fields

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Bibliographic Details
Published inSemiconductor science and technology Vol. 7; no. 5; pp. 676 - 680
Main Authors Christianen, P C M, Stanaway, M B, Chamberlain, J M, Reinen, H A J M, Knippels, G M H, Singleton, J, Henini, M
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.05.1992
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Gallium Arsenides
Transport process
Quantum well
Exciton
Semiconductor materials
Excitation intensity
Photoluminescence
Aluminium Gallium Arsenides Mixed
Experimental study
Magnetic field
Superlattice
Inorganic compound
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/7/5/010