A distributed MOS attenuator
A wideband electrically controllable resistive attenuator using a distributed MOS transistor is described. Bandwidth and attenuation for lumped and distributed structures are compared and a quality factor is defined. Some exmples of application for controlling the gain of amplifiers are also given.
Saved in:
Published in | Proceedings of the IEEE Vol. 55; no. 4; pp. 562 - 563 |
---|---|
Main Author | |
Format | Journal Article |
Language | English |
Published |
IEEE
01.01.1967
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A wideband electrically controllable resistive attenuator using a distributed MOS transistor is described. Bandwidth and attenuation for lumped and distributed structures are compared and a quality factor is defined. Some exmples of application for controlling the gain of amplifiers are also given. |
---|---|
ISSN: | 0018-9219 1558-2256 |
DOI: | 10.1109/PROC.1967.5587 |