A distributed MOS attenuator

A wideband electrically controllable resistive attenuator using a distributed MOS transistor is described. Bandwidth and attenuation for lumped and distributed structures are compared and a quality factor is defined. Some exmples of application for controlling the gain of amplifiers are also given.

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Bibliographic Details
Published inProceedings of the IEEE Vol. 55; no. 4; pp. 562 - 563
Main Author Bilotti, A.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1967
Subjects
Attenuation
Attenuators
Bandwidth
Broadband amplifiers
MOSFETs
Parasitic capacitance
Q factor
Resistors
Thermal variables control
Voltage control
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Summary:A wideband electrically controllable resistive attenuator using a distributed MOS transistor is described. Bandwidth and attenuation for lumped and distributed structures are compared and a quality factor is defined. Some exmples of application for controlling the gain of amplifiers are also given.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1967.5587