C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing

• Published in: Electronics letters Vol. 44; no. 1; pp. 49 - 50
• Main Authors: ROTH, J. E, FIDANER, O, EDWARDS, E. H, SCHAEVITZ, R. K, KUO, Y.-H, HELMAN, N. C, KAMINS, T. I, HARRIS, J. S, MILLER, D. A. B
• Format: Journal Article
• Language: English
• Published: London Institution of Electrical Engineers 2008
• Subjects: Applied sciences; Circuit properties; Compound structure devices; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Integrated optics. Optical fibers and wave guides; Integrated optoelectronics. Optoelectronic circuits; Optical and optoelectronic circuits; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor alloys; Electroabsorption modulator; Quantum well; Buried layer; Oxide layer; Microwave; Centimetric wave; Quantum confined Stark effect; Contrast; Silicon on insulator technology; Total internal reflection; C band; Fabry Perot resonator; Wafer