C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing

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Bibliographic Details
Published inElectronics letters Vol. 44; no. 1; pp. 49 - 50
Main Authors ROTH, J. E, FIDANER, O, EDWARDS, E. H, SCHAEVITZ, R. K, KUO, Y.-H, HELMAN, N. C, KAMINS, T. I, HARRIS, J. S, MILLER, D. A. B
Format Journal Article
LanguageEnglish
Published London Institution of Electrical Engineers 2008
Subjects
Applied sciences
Circuit properties
Compound structure devices
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated optics. Optical fibers and wave guides
Integrated optoelectronics. Optoelectronic circuits
Optical and optoelectronic circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor alloys
Electroabsorption modulator
Quantum well
Buried layer
Oxide layer
Microwave
Centimetric wave
Quantum confined Stark effect
Contrast
Silicon on insulator technology
Total internal reflection
C band
Fabry Perot resonator
Wafer
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ISSN:0013-5194
1350-911X
DOI:10.1049/el:20082979