Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling

Dense arrays of self-assembled nanoholes are fabricated in GaAs(100) surfaces by As-free oxide cleaning thermal process. The formation of pit-like structures above 500 °C occurs by congruent evaporation of GaAs in the areas where the oxides have already desorbed. Thermally etched nanoholes exhibit i...

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Bibliographic Details
Published inJournal of crystal growth Vol. 630; p. 127588
Main Authors Cesura, Federico, Vichi, Stefano, Tuktamyshev, Artur, Bietti, Sergio, Fedorov, Alexey, Sanguinetti, Stefano, Iizuka, Kanji, Tsukamoto, Shiro
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.03.2024
Subjects
GaAs
Molecular beam epitaxy
Quantum dots
Self-assembly
Thermal Drilling
Molecular beam epitaxy
Self-assembly
Quantum dots
Thermal Drilling
GaAs
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Summary:Dense arrays of self-assembled nanoholes are fabricated in GaAs(100) surfaces by As-free oxide cleaning thermal process. The formation of pit-like structures above 500 °C occurs by congruent evaporation of GaAs in the areas where the oxides have already desorbed. Thermally etched nanoholes exhibit inverted symmetric conical shape with an average depth/base diameter ratio of 0.21. Shallow and deep nanoholes are formed with this method, their depth ranging from 2 nm to 15 nm. Metallic Indium deposited onto the etched surfaces accumulates at the bottom of the nanoholes, thus making the etched pits a convenient template for the fabrication of high density quantum dot structures. •Thermal drilling results in symmetric conical nanoholes on GaAs(100) substrates.•Density of nanoholes can be tuned by thermal drilling parameters.•Thermally drilled nanoholes are preferred accumulation sites for metal adatoms.•Thermally drilled nanoholes are promising template for growth of inverted quantum dots.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2024.127588