Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate

• Published in: Technical physics letters Vol. 45; no. 6; pp. 529 - 532
• Main Authors: Bessolov, V. N., Kompan, M. E., Konenkova, E. V., Panteleev, V. N., Rodin, S. N., Shcheglov, M. P.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.06.2019; Springer Nature B.V
• Subjects: ALUMINIUM NITRIDES; Buffer layers; BUFFERS; Classical and Continuum Physics; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; Epitaxial growth; GALLIUM NITRIDES; HYDRIDES; Metalorganic chemical vapor deposition; NANOSTRUCTURES; ORGANOMETALLIC COMPOUNDS; Physics; Physics and Astronomy; PRESSURE RANGE GIGA PA; SILICON; Silicon carbide; SILICON CARBIDES; Silicon substrates; STRESSES; SUBSTRATES; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION; Raman scattering; semipolar gallium nitride; vapor-phase epitaxy
• ISSN: 1063-7850; 1090-6533
• DOI: 10.1134/S106378501906004X

Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 1) on a V -shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10 1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ω θ ~ 45 arcmin, whereas for the semipolar GaN(10 1), these values are –0.29 GPa and ω θ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.