Al concentration dependence of crystal structure for Ca3Ta(Ga,Al)3Si2O14 piezoelectric single crystals

Al concentration dependence of the crystal structure on Ca3Ta(Ga1-xAlx)Si2O14 (CTGAS) piezoelectric single crystals were investigated by X-ray crystal structure analysis. O(2)-Si-O(2) and Si-O(2)-(Ga,Al) bond angles systematically increased with increasing Al concentration, and the result suggests t...

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Published inJournal of solid state chemistry Vol. 277; pp. 195 - 200
Main Authors Yokota, Yuui, Kudo, Tetsuo, Ohashi, Yuji, Inoue, Kenji, Yoshino, Masao, Yamaji, Akihiro, Kurosawa, Shunsuke, Kamada, Kei, Yoshikawa, Akira
Format Journal Article
LanguageEnglish
Published Elsevier Inc 01.09.2019
Subjects
Al substitution
Ca3Ta(Ga1-xAlx)3Si2O14
Crystal structure
Piezoelectric material
Single crystal
Piezoelectric material
Ca3Ta(Ga1-xAlx)3Si2O14
Single crystal
Al substitution
Crystal structure
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Summary:Al concentration dependence of the crystal structure on Ca3Ta(Ga1-xAlx)Si2O14 (CTGAS) piezoelectric single crystals were investigated by X-ray crystal structure analysis. O(2)-Si-O(2) and Si-O(2)-(Ga,Al) bond angles systematically increased with increasing Al concentration, and the result suggests that the increase of structural anisotropy by the Al substitution is attributable to the planarization of the O(2)-Si-O(2)-(Ga,Al). In addition, (Ga,Al)-O(2), (Ga,Al)-O(3) and Ca-O(1) bond lengths systematically decreased with increasing the Al substitution. The cation shift of the Si and (Ga,Al) ions out of center from the barycenter of the oxygen coordination environment decreased with increasing Al concentration. [Display omitted]
ISSN:0022-4596
1095-726X
DOI:10.1016/j.jssc.2019.06.009