Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases

Tetramethylsilane, alone and in combination with inert gases are widely used in various material processing. The electron transport coefficients in binary mixtures tetramethylsilane gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was firstly calculated and analyzed by a two-term a...

Full description

Saved in:
Bibliographic Details
Published inMATEC Web of Conferences Vol. 189; p. 11006
Main Authors Thi Tuoi, Phan, Xuan Hien, Pham, Anh Tuan, Do
Format Journal Article Conference Proceeding
LanguageEnglish
Published Les Ulis EDP Sciences 01.01.2018
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Tetramethylsilane, alone and in combination with inert gases are widely used in various material processing. The electron transport coefficients in binary mixtures tetramethylsilane gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was firstly calculated and analyzed by a two-term approximation of the Boltzmann equation in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (Townsend). These results can be considered to use in many industrial applications depending on particular application of gas, especially on plasma polymerization and plasma enhanced chemical vapour deposition.
ISSN:2261-236X
2274-7214
2261-236X
DOI:10.1051/matecconf/201818911006