TiO2 / SiO2 Multilayer Insulating Films for ELDs

Dielectric properties and the optical energy gap of TiO2/SiO2 multilayer films for electroluminescent devices prepared by sputtering were measured. The thickness ratio, TiO2/SiO2, was fixed at 1/3, and TiO2 monolayer thickness, dt, was varied from 0.3 to 60 nm. The peak of the maximum charge density...

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Published inJournal of the Electrochemical Society Vol. 139; no. 4; pp. 1204 - 1206
Main Authors Nakayama, T., Onisawa, K., Fuyama, M., Hanazono, M.
Format Journal Article
LanguageEnglish
Published 01.04.1992
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Summary:Dielectric properties and the optical energy gap of TiO2/SiO2 multilayer films for electroluminescent devices prepared by sputtering were measured. The thickness ratio, TiO2/SiO2, was fixed at 1/3, and TiO2 monolayer thickness, dt, was varied from 0.3 to 60 nm. The peak of the maximum charge density, which is the product of the dielectric constant and the breakdown field strength, was observed at dt = 1 nm. The optical energy gap was constant for dt greater than 2 nm, and increased as dt dropped below 2 nm. The films of dt less than 2 nm are thought to be a composite whose contents vary periodically, and there is no bulk TiO2. 4 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2069367