The Dissolution Kinetics of GaAs in Undersaturated Isothermal Solutions in the Ga‐Al‐As System

Experiments are described which demonstrate that during the isothermal dissolution of GaAs wafers into undersaturated Ga--Al--As solutions a graded layer of the alloy (GaAl)As is present on the surface. Such a layer can only be formed by solid diffusion. A kinetic analysis of the situation using a v...

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Published inJournal of the Electrochemical Society Vol. 127; no. 5; pp. 1177 - 1182
Main Authors Small, M. B., Ghez, R., Potemski, R. M., Reuter, W.
Format Journal Article
LanguageEnglish
Published 01.05.1980
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Summary:Experiments are described which demonstrate that during the isothermal dissolution of GaAs wafers into undersaturated Ga--Al--As solutions a graded layer of the alloy (GaAl)As is present on the surface. Such a layer can only be formed by solid diffusion. A kinetic analysis of the situation using a value of 5 x 10--12 cm2 s--1 for the diffusion coefficient of Al in the solid gives a good agreement with the experimental results. The fact that a layer is formed during dissolution is counter to a number of recent publications on the subject, while the measured diffusion coefficient is very different from that measured in bulk MBE material. The significance of obtaining an understanding of this situation is relevant to the formation of all heterojunctions by near-equilibrium processes.20 refs.--AA
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2129842