Piezoelectric properties of ScAlN thin films for piezo-MEMS devices
This paper reports the piezoelectric properties of ScAlN thin films. We evaluated the piezoelectric coefficients d 33 and d 31 of Sc x Al 1-x N thin films directly deposited onto silicon wafers, as well the radio frequency (RF) electrical characteristics of Sc 0.35 Al 0.65 N bulk acoustic wave (BAW)...
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Published in | 2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS) pp. 733 - 736 |
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Main Authors | , , , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
IEEE
01.01.2013
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Subjects | |
Online Access | Get full text |
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Summary: | This paper reports the piezoelectric properties of ScAlN thin films. We evaluated the piezoelectric coefficients d 33 and d 31 of Sc x Al 1-x N thin films directly deposited onto silicon wafers, as well the radio frequency (RF) electrical characteristics of Sc 0.35 Al 0.65 N bulk acoustic wave (BAW) resonators at around 2 GHz, and found a maximum value for d 33 of 28 pC/N and a maximum -d 31 of 13 pm/V at 40% scandium concentration. In BAW resonators that use Sc 0.35 Al 0.65 N as a piezoelectric film, the electromechanical coupling coefficient k 2 (=15.5%) was found to be 2.6 times that of resonators with AlN films. These experimental results are in very close agreement with first-principles calculations. The large electromechanical coupling coefficient and high sound velocity of these films should make them suitable for high frequency applications. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Conference-1 ObjectType-Feature-3 content type line 23 SourceType-Conference Papers & Proceedings-2 |
ISBN: | 9781467356541 1467356549 |
ISSN: | 1084-6999 |
DOI: | 10.1109/MEMSYS.2013.6474347 |