Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge

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Bibliographic Details
Published inJournal of electronic materials Vol. 24; no. 10; pp. 1357 - 1361
Main Authors HAHN, D, JASCHINSKI, O, WEHMANN, H.-H, SCHLACHETZKI, A, VON ORTENBERG, M
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.10.1995
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Energy gap
Gallium arsenides
Inorganic compounds
Interband transitions
Ternary compounds
Refractive index
Urbach rule
N-type conductors
Experimental study
Carrier density
Optical absorption
Indium arsenides
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ISSN:0361-5235
1543-186X
DOI:10.1007/BF02655448