Use of self bias to improve power saturation and intermodulation distortion in CW class B HBT operation

It is shown that a DC base bias circuit can be used to control the RF performance of a heterojunction bipolar transistor (HBT) operating under CW conditions near class B mode. By a careful choice of base bias resistance, gain can be linearized, output power at 1-dB gain compression increased, and in...

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Bibliographic Details
Published inIEEE microwave and guided wave letters Vol. 2; no. 5; pp. 174 - 176
Main Authors Teeter, D.A., East, J.R., Haddad, G.I.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.1992
Subjects
Circuits
Distortion measurement
Electrical resistance measurement
Gain measurement
Heterojunction bipolar transistors
Intermodulation distortion
Performance evaluation
Power generation
Power measurement
Radio frequency
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Summary:It is shown that a DC base bias circuit can be used to control the RF performance of a heterojunction bipolar transistor (HBT) operating under CW conditions near class B mode. By a careful choice of base bias resistance, gain can be linearized, output power at 1-dB gain compression increased, and intermodulation distortion reduced. Measurements performed on HBTs biased near class B operation showed a 10-dB improvement in 1-dB gain compression point and a 10-dB reduction in intermodulation distortion for moderate power levels. Results for various values of DC base resistance for a typical HBT are presented.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1051-8207
1558-2329
DOI:10.1109/75.134345