Selective Wet Etching Characteristics of Lattice‐Matched InGaAs / InAlAs / InP

• Published in: Journal of the Electrochemical Society Vol. 139; no. 10; pp. L91 - L93
• Main Authors: Tong, M., Nummila, K., Ketterson, A. A., Adesida, I., Aina, L., Mattingly, M.
• Format: Journal Article
• Language: English
• Published: 01.10.1992
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.2069023

A selectivity study of the etching of lattice-matched InGaAs, InAlAs, and InP in citric acid/H sub(2)O sub(2) solutions is reported. Selectivities as high as 500 and 187 are obtained for the etching of InGaAs on InP and InAlAs on InP, respectively. The selectively for the etching of InGaAs on InAlAs varies from 25 at a citric acid/H sub(2)O sub(2) solution ratio of 1 to a selectivity of 2.5 at a solution ratio of 10. The activation energies and the etch profiles of InGaAs and InAlAs are also reported. The implications of this selectively variation for the fabrication of InAlAs/InGaAs/InP heterostructure field-effect transistors are discussed.