Interface structure between Bi and CdTe in molecular beam epitaxially grown Bi/CdTe and Bi/Bi1-xSbx superlattices

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Bibliographic Details
Published inJournal of electronic materials Vol. 23; no. 12; pp. 1255 - 1259
Main Authors CHEN, J, DI VENERE, A, YI, X. J, HOU, C. L, WANG, H. C, WONG, G. K, KETTERSON, J. B
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.12.1994
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Inorganic compounds
Semiconductor materials
Transition element compounds
Binary compounds
Bismuth Antimonides
Solid-solid interfaces
Experimental study
High-resolution methods
Thin films
Interface structure
Solid solutions
Cadmium tellurides
Superlattices
Bismuth compounds
Bismuth
Molecular beam epitaxy
Chemical composition
TEM
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ISSN:0361-5235
1543-186X
DOI:10.1007/BF02649887