Accuracy of Y-function methods for parameters extraction of two-dimensional FETs across different technologies

• Published in: Electronics letters Vol. 56; no. 18; pp. 942 - 945
• Main Authors: Pacheco-Sanchez, A, Jiménez, D
• Format: Journal Article
• Language: English
• Published: The Institution of Engineering and Technology 03.09.2020
• Subjects: carrier mobility; contact resistance; field effect transistors; function‐based method; intrinsic mobility degradation factor; Nanotechnology; parameters extraction; semiconductor device models; semiconductor device reliability; transport model; two‐dimensional FET; two‐dimensional field‐effect transistors; Y‐function methods; two-dimensional field-effect transistors; function-based method; contact resistance; parameters extraction; intrinsic mobility degradation factor; field effect transistors; carrier mobility; Y-function methods; semiconductor device models; semiconductor device reliability; two-dimensional FET; transport model
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2020.1502

The accuracy of contact resistance values of two-dimensional (2D) field-effect transistors extracted with the Y-function considering the impact of the intrinsic mobility degradation is evaluated here. The difference between methodologies that take this factor into account and ignore it is pointed out by a detailed analysis of the approximations of the transport model used for each extraction. In contrast to the oftenly used approach where the intrinsic mobility degradation is neglected, a Y-function-based method considering a more complete transport model yields contact resistance values similar to reference values obtained by other intricate approaches. The latter values are more suitable also to describe experimental data of 2D devices of different technologies. The intrinsic mobility degradation factor of 2D transistors is experimentally characterised for the first time and its impact on the device performance is described and evaluated.