Self‐Anchored Van‐Der‐Waals Stacking Growth of Transition‐Metal Dichalcogenide Nanoplates

• Published in: Advanced materials (Weinheim) Vol. 36; no. 39; pp. e2407586 - n/a
• Main Authors: Jiang, Dingding, Tang, Ya‐Nan, Wang, Di, Xu, Xiangpeng, Sun, Jiang, Ma, Rong, Li, Wenhao, Han, Zhiya, Liu, Yunqi, Wei, Dacheng
• Format: Journal Article
• Language: English
• Published: Germany Wiley Subscription Services, Inc 01.09.2024
• Subjects: Chalcogenides; Controllability; nanoplate; Nucleation; Optoelectronics; photodetectors; self‐anchored growth; Substrates; Thickness; transition‐metal dichalcogenide; van der Waals stacking; photodetectors; self‐anchored growth; transition‐metal dichalcogenide; van der Waals stacking; nanoplate
• ISSN: 0935-9648; 1521-4095; 1521-4095
• DOI: 10.1002/adma.202407586

Transition‐metal dichalcogenide (TMDs) nanoplates exhibit unique properties different from their monolayer counterparts. Controllable nucleation and growth are prerequisite and highly desirable for their practical applications. Here, a self‐anchored van‐der‐Waals stacking growth method is developed, by which the substrate pit induced by precursor etching anchors the source material, impedes the lateral spreading of source droplets and facilitates the in situ stacking growth of high‐quality TMD nanoplates with a thickness of tens to hundreds of nanometers at well‐defined locations. As such, an array of TMD nanoplates with controlled lateral dimensions are produced and applied in arrayed photodetectors. This study solves the problem of controllable preparation of TMD nanoplates, holding promise for applications in electronics and optoelectronics. A self‐anchored van‐der‐Waals stacking growth mechanism is developed to produce transition‐metal dichalcogenide nanoplates with desired lateral size and locations. As such, WSe2 and MoSe2 nanoplate arrays are produced for the subsequent fabrication of nanoplate‐based optoelectronics.