100 Gb/s and 2 V Vπ InP Mach-Zehnder modulator with an n-i-p-n heterostructure

• Published in: Electronics letters Vol. 52; no. 22; pp. 1866 - 1867
• Main Authors: Ogiso, Y, Ozaki, J, Kashio, N, Kikuchi, N, Tanobe, H, Ohiso, Y, Kohtoku, M
• Format: Journal Article
• Language: English
• Published: The Institution of Engineering and Technology 27.10.2016
• Subjects: amplitude shift keying; bit rate 100 Gbit/s; capacitive‐loaded travelling‐wave electrode; electrical loss; electrodes; electrooptic BW; electro‐optical modulation; III‐V semiconductors; indium compounds; InP; low‐voltage modulator; Mach‐Zehnder interferometers; modulators; nonreturn‐to‐zero on‐off keying modulation; n‐i‐p‐n heterostructure; Optical communication; ultra‐high bandwidth Mach‐Zehnder modulator; voltage 2 V; voltage 2 V; electrodes; electrical loss; indium compounds; bit rate 100 Gbit/s; InP; amplitude shift keying; ultra-high bandwidth Mach-Zehnder modulator; Mach-Zehnder interferometers; nonreturn-to-zero on-off keying modulation; electro-optical modulation; n-i-p-n heterostructure; modulators; capacitive-loaded travelling-wave electrode; low-voltage modulator; III-V semiconductors; electrooptic BW
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2016.2987

An ultra-high bandwidth (BW) and a low Vπ InP Mach-Zehnder modulator with an n-i-p-n heterostructure is proposed. The combination of the n-i-p-n heterostructure and the capacitive-loaded travelling-wave electrode provides a modulator with extremely low electrical loss. The device exhibits a 3 dB electro-optic BW of over 67 GHz and a Vπ of 2.0 V. A 100 Gb/s non-return-to-zero on–off keying modulation with an extinction ratio of over 10 dB is also realised.