COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaN-based transistor 10 KeV X-ray Analysis

Gallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its characteristic parameters. Devices were exposed to a 10 keV X-ray source accumulatin...

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Published inJournal of physics. Conference series Vol. 2340; no. 1; pp. 12045 - 12050
Main Authors Bôas, A.C.V., Alberton, S.G., de Melo, M.A.A., Santos, R.B.B., Giacomini, R.C., Medina, N.H., Seixas, L.E., Finco, S., Palomo, F.R., Guazzelli, M. A.
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.09.2022
Subjects
Aluminum gallium nitrides
Electronic devices
Field effect transistors
Gallium nitrides
Ionizing radiation
Parameters
Physics
Semiconductor devices
X ray analysis
X ray sources
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Summary:Gallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its characteristic parameters. Devices were exposed to a 10 keV X-ray source accumulating a total of 350 krad(Si). However, results indicate that the tested components are more tolerant to the effects of TID when in on-state mode rather than the off-mode, that is, when the device is working, which is good news for COTS applications in environments subject to the effects of ionizing radiation.
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ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2340/1/012045