Transient enhanced diffusion of B in Si implanted with decaborane cluster ions

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 149; no. 8; pp. G474 - G476
Main Authors SOSNOWSKI, Marek, ALBANO, Maria A, CHENG LI, GOSSMANN, Hans Joachim L, JACOBSON, Dale C
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.08.2002
Subjects
Chemical interdiffusion; diffusion barriers
Condensed matter: structure, mechanical and thermal properties
Diffusion in solids
Exact sciences and technology
Physics
Transport properties of condensed matter (nonelectronic)
MOS technology
Ion implantation
Ionic cluster
Boron ions
Secondary ion mass spectrometry
Silicon
Surface diffusion
Experimental study
Transients
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.1486453