A high current drop GaAs bistable switch

A current drop of 41.5 percent and a switching time of 110 ps is reported for a 10-µm supercritically doped n + -n-n + GaAs transferred electron device operated as a bistable switch into a 25-Ω resistive load. An investigation to check that no microwave oscillations occur is presented.

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Bibliographic Details
Published inProceedings of the IEEE Vol. 62; no. 8; pp. 1166 - 1167
Main Authors Izadpanah, S.H., Jeppsson, B., Jeppesen, P., Jondrup, P.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1974
Subjects
Anodes
Circuits
Coaxial components
Electromagnetic heating
Gallium arsenide
Gunn devices
Low voltage
Microwave devices
Switches
Threshold voltage
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Summary:A current drop of 41.5 percent and a switching time of 110 ps is reported for a 10-µm supercritically doped n + -n-n + GaAs transferred electron device operated as a bistable switch into a 25-Ω resistive load. An investigation to check that no microwave oscillations occur is presented.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1974.9577