Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting

Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor–liquid–solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1–2 at. % Sn but we observe the emergence of tetragonal rutile SnO2 which dominates w...

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Bibliographic Details
Published inJournal of applied physics Vol. 118; no. 19
Main Authors Zervos, M., Othonos, A., Gianneta, V., Travlos, A., Nassiopoulou, A. G.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 21.11.2015
Subjects
Applied physics
Crystal structure
Doppler effect
Emission spectra
Energy conversion efficiency
Gallium oxides
Gallium sesquisulfide
Hydrogen sulfide
Nanowires
Photoluminescence
Photovoltaic cells
Red shift
Silicon substrates
Solar cells
Solar energy
Tin
Tin dioxide
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Summary:Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor–liquid–solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1–2 at. % Sn but we observe the emergence of tetragonal rutile SnO2 which dominates with increasing content of Sn. All of the nanowires exhibited photoluminescence at 2.7 eV but a red shift of the emission occurred from 2.7 eV to 1.8 eV after post growth processing under H2S above 500 °C. The red emission is related to deep donor to acceptor transitions and the formation of monoclinic β-Ga2S3 and has been exploited for spectral shifting in a Si solar cell resulting into an increase of the power conversion efficiency from 7.2% to 8.3%.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4935633