Numerical approach to generalized transmission line model and its application to Au/Sn/p-HgCdTe contact

A generalized transmission line model (TLM) and a compatible numerical method have been proposed to characterize metal-semiconductor contacts that exhibit nonlinear properties. This model and method have been applied to the analysis of Au/Sn/p-HgCdTe contact and have realized determination of relate...

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Bibliographic Details
Published inJournal of applied physics Vol. 115; no. 16
Main Authors He, Kai, Li, Yang, Chen, Xing, Hua, Hua, Gao, Yan-Lin, Ye, Zhen-Hua, Lin, Chun, Wang, Jian-Xin, Zhang, Qin-Yao
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 28.04.2014
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Summary:A generalized transmission line model (TLM) and a compatible numerical method have been proposed to characterize metal-semiconductor contacts that exhibit nonlinear properties. This model and method have been applied to the analysis of Au/Sn/p-HgCdTe contact and have realized determination of related physical parameters by fitting experimental data. Our model's merit of avoiding the overestimation of barrier height active contact area encountered in other methods without TLM scheme is discussed. In addition, only by using this model, the transfer length can be credibly determined in the case of nonlinear contacts.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4873303