Transient response of silicon devices at 4.2 K. II. Application to the case of a metal-oxide-semiconductor transistor

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Bibliographic Details
Published inSemiconductor science and technology Vol. 6; no. 9; pp. 905 - 911
Main Authors Simoen, E, Dierickx, B, Claeys, C, Declerck, G
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.09.1991
Institute of Physics
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Field effect transistor
Transient response
Semiconductor device
Silicon
MOS transistor
Cryogenic temperature
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/6/9/012