Photoconductivity and photo-detection response of multiferroic bismuth iron oxide

We report visible light detection with in-plane BiFeO3 (BFO) thin films grown on pre-patterned inter-digital electrodes. In-plane configured BFO film displayed photocurrents with a 40:1 photo-to-dark-current ratio and improved photo-sensing ability for >15 000 s (4 h) under small bias voltage (42...

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Published inApplied physics letters Vol. 104; no. 13
Main Authors Anshul, Avneesh, Borkar, Hitesh, Singh, Paritosh, Pal, Prabir, Kushvaha, Sunil S., Kumar, Ashok
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 31.03.2014
Subjects
Applied physics
Bismuth compounds
Current carriers
Dark current
Decay
Iron oxides
Photoconductivity
Silicon
Thin films
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Summary:We report visible light detection with in-plane BiFeO3 (BFO) thin films grown on pre-patterned inter-digital electrodes. In-plane configured BFO film displayed photocurrents with a 40:1 photo-to-dark-current ratio and improved photo-sensing ability for >15 000 s (4 h) under small bias voltage (42 V). Nearly, sixty percent of the photo-induced charge carriers decay in 1.0 s and follow a double-exponential decay model. At 373 K, the effect of light does not significantly increase the dark current, probably due to reduced mobility. Sub-bandgap weak monochromatic light (1 mw/cm2) shows one fold increase in photo-charge carriers.
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4870626