Adjustable photovoltaic performance driven by polarization in molecular ferroelectrics

• Published in: Journal of alloys and compounds Vol. 976; p. 173026
• Main Authors: Yao, Qifu, Zhang, Huixing, Yao, Ruijia, Zhu, Jiangwei, Mao, Weiwei, Li, Xing'ao
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 05.03.2024
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2023.173026

The photovoltaic effect driven by ferroelectric polarization shows great application potential in photovoltaic devices. Two-dimensional (2D) Ruddlesden-Popper perovskite molecular ferroelectric materials, which combine polarization and low band gap properties, occupy a promising position in this field. However, literature reports mostly focus on single crystal blocks, and film devices are rarely reported. In this paper, 2D EA4Pb3Br10 (EA=ethylammonium) molecular ferroelectrics are used as the absorption layers to prepare photovoltaic devices, and the photovoltaic performance of the devices is enhanced by polarization. Dense EA4Pb3Br10 films are prepared by immediately adding antisolvent propylene glycol methyl ether acetate when the spin coating rate reaches the maximum. Surprisingly, the photovoltaic device exhibits significant photovoltaic effects under AM1.5 (100 mW/cm2) illumination with VOC ∼ 1.042 V and JSC ∼ 438.02 μA/cm2, which is much higher than that of ordinary inorganic ferroelectrics. In addition, the photovoltaic performance has been greatly improved by applying an external electric field, reaching to the maximum VOC ∼ 1.087 V and JSC ∼ 489.12 μA/cm2. This indicates the potential application prospects of 2D EA4Pb3Br10 molecular ferroelectric films in photovoltaic devices. •The high-quality 2D molecular ferroelectric EA4Pb3Br10 films were prepared.•by the antisolvent method.•The photovoltaic device of EA4Pb3Br10 can achieve photovoltaic effect regulation by polarization.•Transport layers can greatly improve the photovoltaic performance of molecular ferroelectric EA4Pb3Br10 films.•The photovoltaic performance of devices with p-i-n structure is much higher than that of ordinary inorganic ferroelectrics.