Effect of substrate temperature on few-layer graphene grown on Al2O3 (0001) via direct carbon atoms deposition

• Published in: Solid state communications Vol. 152; no. 11; pp. 960 - 963
• Main Authors: Liu, Zhongliang, Tang, Jun, Kang, Chaoyang, Zou, Chongwen, Yan, Wensheng, Xu, Pengshou
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.06.2012; Elsevier
• Subjects: A. Few-layer graphene; B. Substrate temperature; Cross-disciplinary physics: materials science; rheology; D. growth behavior; E. Synchrotron radiation; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; D. growth behavior; E. Synchrotron radiation; B. Substrate temperature; A. Few-layer graphene; Aluminium oxide; Raman spectra; E Synchrotron radiation; B Substrate temperature; A Few-layer graphene; RHEED; EXAFS; Substrat temperature; Deposition process; D growth behavior; Graphene; Growth mechanism; Molecular beam epitaxy; Synchrotron radiation
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2012.02.027

Few-layer graphene (FLG) was grown on Al2O3 (0001) substrates at different temperatures via direct carbon atoms deposition by using solid source molecular beam epitaxy (SSMBE) method. The structural properties were characterized by reflection high energy electron diffraction (RHEED), Raman spectroscopy and near-edge X-ray absorption fine-structure (NEXAFS). The results showed that the FLG started to form at the substrate temperature of 700°C. When the substrate temperature increased to 1300°C, the quality of the FLG was the best and the layer number was estimated to be less than 5. At higher substrate temperature (1400°C or above), the crystalline quality of the FLG would be deteriorated. Our experiment results demonstrated that the substrate temperature played an important role on the FLG layer formation on Al2O3 (0001) substrates and the related growth mechanism was briefly discussed. ► We have prepared the few-layer graphene (FLG) on Al2O3 (0001) substrates at different temperatures. ► Direct carbon atoms deposition by using solid source molecular beam epitaxy (SSMBE) method. ► The experiment results demonstrated that the substrate temperature played an important role on the FLG layer formation. ► The SSMBE method is an effective technique for the FLG preparation by direct carbon atoms evaporation.